Structural and thermal properties of reaction bonded SiC/Si composite

Journal of Material Sciences & Engineering

ISSN: 2169-0022

Open Access

Structural and thermal properties of reaction bonded SiC/Si composite

3rd International Conference and Expo on Ceramics and Composite Materials

June 26-27, 2017 Madrid, Spain

Chaoying Ni, Yuying Zhang, Tianshi Wang, Chun-yen Hsu and Prashant Karandikar

University of Delaware, USA
M-Cubed Technologies, USA

Scientific Tracks Abstracts: J Material Sci Eng

Abstract :

The thermal conductivity (?º) of a reaction bonded SiC/Si composite as a function of SiC percentage and temperature was characterized. The ?º value strongly associates with the SiC percentage and the inclusion of Si in SiC significantly decreases the ?º value. The interfaces of both SiC/Si and SiC/SiC have significant contribution to the thermal resistivity. HRTEM confirms the existence of stacking faults and dislocations within the SiC phases near the interfacial region. In addition, an amorphous thin layer exists at the large angle grain boundary where significant lattice mismatch exists between SiC and Si during the crystal growth at the fabrication temperature. At a measurement temperature of about 1100?°C, the ?º value levels off and deviates from a general downward trend, suggesting a mechanism of structural evolution in the composite. The in-situ TEM heating test confirms the phase transformation of a-Si to crystalline Si at elevated temperatures.

Biography :

Chaoying Ni centers his research interest on the structural and property characterizations of advanced materials using Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy (SEM). His expertise includes electron crystallography and e-beam associated spectroscopy. His active efforts are on the process-structure-property relationships of advanced composites, materials for energy or environment, mechanistic interpretation of thermal properties, mesoporous crystals, functionalized nanostructures and assemblies, thin films, interfaces and coherence growths.


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