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(Non-van der Waal) Functionalization of graphene with retained trigonal lattice and charge carrier mobility
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Journal of Material Sciences & Engineering

ISSN: 2169-0022

Open Access

(Non-van der Waal) Functionalization of graphene with retained trigonal lattice and charge carrier mobility


Joint Conference: International Conference on DIAMOND AND CARBON MATERIALS & GRAPHENE AND SEMICONDUCTORS

July 17-18, 2017 Chicago, USA

Songwei Che, Kabeer Jasuja, Sanjay Behura, Phong Nguyen, T S Sreeprasad and Vikas Berry

University of Illinois at Chicago, USA
Indian Institute of Technology, India
Clemson University, USA

Posters & Accepted Abstracts: J Material Sci Eng

Abstract :

To widen the spectrum of its applications, it is important to functionalize graphene, while preserving its superior properties, and retaining its planar lattice (for high mobility) and its carbons� sp2 hybridized state (for high carrier density). Such a functionalization mechanism, when conducted in compliance to the needs of semiconductor manufacturing processes will enable graphene�s incorporation into diverse applications. Here, we develop a unique eta-6 organometallic approach to functionalize graphene in a vapor-phase process, which retains the structural and electrical properties, while offering chemical sites for interaction and interfacing with other chemical or biochemical systems. In contrast to other functionalization processes, the eta6-functionalized graphene maintained its high charge carrier mobility (1000 cm2V-1s-1 at 300 K). We will discuss the mechanism of charge transfer in eta-6 functionalization of chromium carbonyl on graphene. The chemical groups were utilized for subsequent chemistry via an in-situ formation of silver nanoparticles at functionalization sites. We show that this graphene-eta-6-Ag structure enables an ~11-fold plasmonic enhancement in the efficiency of graphene/n-Si solar cells (1.24%) to exemplify the potential of this functionalization. This process will unveil graphene�s previously unknown potential to hierarchically interface with physical and biological components to produce novel systems and applications. Results will also facilitate gate-fabrication for FETs via atomic- layer-deposition (currently a major challenge).

Biography :

Email: vikasb@uic.edu

Google Scholar citation report
Citations: 3677

Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report

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