Growth and chemical etching of InBi0.6Sb0.4 single crystal

International Conference on Applied Crystallography

October 17-19, 2016 Houston, USA

Maunik Jani

Babaria Institute of Technology, India

Posters & Accepted Abstracts: J Material Sci Eng

Abstract :

InBi0.6Sb0.4 single crystal has been grown by the zone melting method. The freezing interface temperature gradient of 30Ã?Â?C/cm has been found to yield the best quality crystal obtain at growth velocity 1.0 cm/hr. Parallel striations perpendicular to the ingot axis was observed on the top free surfaces of crystal. A new dislocation etchant based on nitric acid has been found to give reproducible etchpitting on the cleavage surface. Standard tests for a dislocation etchant have been carried out and results are reported. Zone melting is a well-known widely used technique to grow crystals of alloys and intermetallic compounds. However, in our laboratory, we have successfully used syringe-pulling method for the growth of low melting point alloys like InBi. However, detailed characterization of the crystals grown by this technique is in progress.

Biography :

Email: drmaunikjani@gmail.com