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Growth and band gap determination of ternary ZrSTe crystals
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Journal of Material Sciences & Engineering

ISSN: 2169-0022

Open Access

Growth and band gap determination of ternary ZrSTe crystals


International Conference and Exhibition on Mesoscopic & Condensed Matter Physics

June 22-24, 2015 Boston, USA

Abhay Dasadia

A. D. Patel Institute of Technology, India

Posters-Accepted Abstracts: J Material Sci Eng

Abstract :

We report new ternary ZrSTe crystals grown by chemical vapour transport method. Vapor transport experiments with iodine were performed on the system ZrSTe to define optimum growth conditions in terms of crystal size and surface perfection. Confirmation of stoichiometric proportion of constituent elements of grown crystals was done by Energy Dispersive Analysis of X-rays (EDAX). To find out band gap, optical absorption in ZrSTe crystals has been measured at room temperature in the spectral range 200 nm-2500 nm. From the study of two dimensions and three dimensions, it has been found that in ZrSTe, indirect transitions are allowed type and optical band gap corresponding to this transition has also been determined. Using the values obtained from optical absorption measurements optical absorption coefficient, extinction coefficient and refractive index are calculated. This finding will inspire the search for similar materials and promote an in-depth investigation of the detailed operating mechanism.

Biography :

Abhay Dasadia did his MPhil in 2009 and PhD (Crystal Growth and Characterizations) in 2013 from Department Of Physics, Sardar Patel University, Vallabh Vidya nagar, Gujarat, India. Presently, he is Assistant Professor of Physics at A.D. Patel Institute of Technology, New Vallabh Vidya nagar, Gujarat, India. He has published more than 12 papers in reputed journals/proceedings and has been serving as an Editorial Board Member of reputed journal.

Email: abhi2physix@gmail.com

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Citations: 3677

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