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From first principles to nano devices fabrication
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Journal of Material Sciences & Engineering

ISSN: 2169-0022

Open Access

From first principles to nano devices fabrication


3rd International Conference and Exhibition on Materials Science & Engineering

October 06-08, 2014 Hilton San Antonio Airport, USA

Manuel Ramos

Accepted Abstracts: Material Sci Eng

Abstract :

This talk will be focusing on presenting an overall panorama regarding the combination of Physics, Chemistry, Biology, Computer Science and Applied Engineering to achieve Material Science fundamentals and it┤s applications. The emphasis will be usage of computational code and software to determine fundamental characteristics (electronic structure) of semiconductor devices with special focus on energy materials. The talk will also present several cases of study for semiconductor (MoS2), superconductor (Bi2212) and photovoltaic materials (TiO2/Organic), which includes nanoparticles, nanotubes, thin films, superconducting tapes and sensors.

Biography :

Manuel Ramos is a member and faculty advisor of the Materials Research Society (MRS-UTEP) chapter. He is also member of American Physics Society, Sociedad Mexicana de Materiales and Sociedad Mexicana de Catalysis, has authored and co-authored about 25 peer-reviewed manuscripts in the area of advanced nanostructured materials including nanoparticles, superconductors, catalysis and quantum computational modeling. His area of expertise includes High-Resolution Transmission Electron Microscopy and Computational Modeling using Density Functional Theory methods. He obtained a Bachelor in Experimental Physics from The University of Texas at El Paso in 2003, a Master┤s degree in Mechanical Engineering from Florida A&M University in 2006 and completed a doctoral degree in Material Science and Engineering at UTEP in 2010. He was appointed at National High Magnetic Field Laboratory, Sematech-Austin, UT-San Antonio and currently he is a Visiting Professor-Researcher at UTEP┤s Materials Research Institute.

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Citations: 3210

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