K Alfaramawi1,2 and M A Alzamil1
1King Saud University, Saudi Arabia 2Alexandria University, Egypt
Posters-Accepted Abstracts: J Material Sci Eng
Numerical calculations of the static dielectric permittivity- dependent electron mobility due to different types of elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence of the electron mobility from 10 K up to 300 K has been demonstrated. Generally, the electron mobility shows peak behavior in this range of temperature. The direct correlation between the electron mobility and the static dielectric permittivity at 300 K was investigated. The dependence of the electron mobility on donor concentration was discussed when the static dielectric permittivity is assumed to be varying and when it is assumed to be a constant. The difference in behavior was noticed particularly at high donor concentrations.
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