Journal of Material Sciences & Engineering

ISSN: 2169-0022

Open Access

Talwar DN

975 Oakland Avenue, 56 Weyandt Hall, Indiana, Pennsylvania 15705- 1087

  • Research Article
    Assessing Biaxial Stress and Strain in 3C-SiC/Si (001) by Raman Scattering Spectroscopy
    Author(s): Talwar DN, Wan L, Tin CC and Feng ZCTalwar DN, Wan L, Tin CC and Feng ZC

    Highly strained 3C-SiC/Si (001) epilayers of different thicknesses (0.1 μm-12.4 μm) prepared in a vertical reactor configuration by chemical vapor deposition (V-CVD) method were examined using Raman scattering spectroscopy (RSS). In the near backscattering geometry, our RSS results for “as-grown” epilayers revealed TO- and LO-phonon bands shifting towards lower frequencies by approximately ~2 cm-1 with respect to the “free-standing” films. Raman scattering data of optical phonons are carefully analyzed by using an elastic deformation theory with inputs of hydrostatic-stress coefficients from a realistic lattice dynamical approach that helped assess biaxial stress, inplane tensile- and normal compressive-strain, respectively. In each sample, the estimated value of strain is found at least two order of magnitude smaller than the one expected from lattice mi.. Read More»
    DOI: 10.4172/2169-0022.1000324

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