Surface chemistry and interface reactions of chalcogenide semiconductors deposited by solutionbased methods for solar cell applications

3^rd International Conference and Exhibition on Materials Science & Engineering

October 06-08, 2014 Hilton San Antonio Airport, USA

Francisco S Aguirre-Tostado

Accepted Abstracts: Material Sci Eng

Abstract :

The ability to produce stoichiometric semiconducting films by solution-based methods is of paramount importance for large area electronics and solar cell applications. In addition, low temperature processing on large areasubstrates promises to drive down costs. Chalcogenide materials offer p- and n-type semiconductors with attractive characteristics for electronic and photovoltaic applications. Necessary operations for device fabrication requires an atomistic understanding of the structure and chemical reactions taking place during thin film deposition and post-deposition thermal treatments. In this respect, X-ray photoelectron spectroscopy (XPS) is uniquely suited for tracking chemical reactions occurringsurface and interface of nanometric layers. The chemical analysis and thermal stability for surface and interface reactions of binary chalcogenide semiconductors is presented. CuS, ZnS, SnS2 and CdS thin films were deposited by the successive ionic layer absorption and reaction method (SILAR) in a glove-box attached to the XPS load-lock chamber for in-situ analyses. Step by step XPS analysis of the SILAR process reveals an incubation period that depends on temperature and ion concentrations. Multilayer structure stability is discussed in terms of chemical reactivity and diffusion of cations. Finally, a demonstration of how theobtained results can help to engineer a more stable structureis presented.