On exotic nanostructure for bio-FET

3^rd International Conference and Exhibition on Biosensors & Bioelectronics

August 11-13, 2014 Hilton San Antonio Airport, San Antonio, USA

Hiroshi Watanabe

Scientific Tracks Abstracts: J Biosens Bioelectron

Abstract :

To use biosensor in conjunction with today?s electronics, the signal sensed by biosensor must be readable at least as charge transportation; which is component of electric current. To aim this, Field Effect Transistor (FET)-type biosensor (bio- FET) is regarded as a promising solution. Koike et al demonstrated the detection of human immunoglobulin G (IgG) using a transparent ZnOFET. They prepared in-doped ZnO layer on glass substrate and hence fabricated Ta2O2 gate dielectric layer with IgGaptamers above ZnO layer. Charge that human IgG will carry to the surface of Ta2O2 in a solvent leads to induced charge on the surface of ZnO layer across Ta2O2. We can detect this induced surface charge as threshold voltage (Vt) shift of bio-FET by using peripheral sense circuit composed of standard CMOS architecture. Note here that visible Vt shift corresponds to at least 1012 cm2 per electron on the surface. If the gate area of bio-FET is 100um x 100um, then human IgG must carry at least 108 electrons to the surface of Ta2O2 in a solvent for predetermined examination time. To make healthcare chip popular, it is demanded to shorten the examination time. If we append an exotic nanostructure to bio-FET, then the number of electrons that must be carried to surface in a solvent is reduced to several thousounds on 100um x 100um gate area.

Biography :

Hiroshi Watanabe received the PhD degree from University of Tsukuba, Ibaraki, Japan in theoretical physics. After that, he joined the Corporate Res. & Dev. Center, Toshiba Corporation from 1994 to 2010. His current position is a tenure-track Faculty Full Professor, Dept. of Electrical and Computer Engineering in National Chiao Tung University, Hsinchu, Taiwan, since February, 2010. He has studied quantum-statistical mechanics, electron device physics, semiconductor device modeling, semiconductor memories, and some cutting edge devices. He holds more than 170 patents all over the world (106 issued & 67 waiting). He is a Senior Member of IEEE.