New technique of thin silicon epitaxial detectors and application of it to nuclear physics and heavy ions

4^th International Conference on Atomic and Nuclear Physics

October 26-27, 2018 | Boston, USA

Andrzej Kordyasz

University of Warsaw, Poland

Posters & Accepted Abstracts: J Astrophys Aerospace Technol

Abstract :

Since thickness of silicon detectors made planar technology is limited to about 300 μm we have elaborated the new technology of thin detectors named �??Low-temperature technique of thin silicon ion implanted epitaxial detectors�?�. In this technique the photolithography, ion implantation and high-temperature anealing of planar technology is replaced by application mechanical mask followed by ion implantation, Al evaporation and long-time, low-temperature baking of prepared silicon detectors in the environmental atmosphere (A. J. Kordyasz et al., Eur. Phys. J. A51 (2015) 15). Using this technique the 5 μm thick strip eptaxial detectors have been produced (A. J. Kordyasz et al., Acta Phys. Pol. B47 (2016) 207). The detector strip widths of about 10 μm on 5 μm thick silicon epitaxial layer were achieved (A. J. Kordyasz et al., HIL Annual Report 2016, page 77). In the proposed talk the �??Low -temperature technique of thin silicon ion implanted epitaxial detectors�?� will be presented and new results of measurements will be shown. Future application to nuclear physics and heavy ions will be discussed.

Biography :

E-mail: kord@slcj.uw.edu.pl