Unconventional semiconductors for advanced III-nitride photonics

8^th International Conference and Exhibition on Lasers, Optics & Photonics

November 15-17, 2017 | Las Vegas, USA

Can Bayram

University of Illinois at Urbana Champaign, USA
Micro and Nanotechnology Technology Laboratory, USA

Posters & Accepted Abstracts: J Laser Opt Photonics

Abstract :

Gallium Nitride (GaN)-based compound semiconductors, throughout their entire composition (tuned by varying the Aluminum (Al), Gallium (Ga), and Indium (In) elemental content), possess direct bandgap and their bulk-layer-spectrum can be tuned from deep ultraviolet (~200 nm) to near-infrared (~1700 nm). Furthermore, subband-energy engineering of AlGaN/GaN superlattice quantum structures enable the spectral response be pushed up to terahertz (~300 �?µm). As such, GaN-based photonic technology can be used in everyday to biotech and scientific applications including solid state lighting; detection of bio-agents/drugs/explosives; and optogenetics. However, inherit polarization fields hinder the electron and hole recombination in the â�?�?quantum wellsâ�? of such photonic devices. This â�?�?polarizationâ�? effect is so pronounced in LEDs that reduced efficiencies under high injection currents â�?�? a phenomenon known as â�?�?droopâ�?-is imminent in all devices. Hence, polarization-free approach is essential for droop-free photonics across the Ultraviolet-Visible-Terahertz spectrum. In this talk, we are going to discuss the opportunities in addressing issues in advanced III-nitride photonics through unconventional semiconductors.