Nanowire-based semiconductor hybrid nanostructures for quantum applications

International Conference on Quantum Physics and Nuclear Engineering

March 14-16, 2016 London, UK

D Zhuang, Z M Jin, H Alradhi, X R Chen, J Shao, S H Shu, N Dai, Ana M Sanchez, P Yates, A A Zhukov and K Durose

Lancaster University, UK
Shanghai Institute of Technical Physics, P R China
University of Warwick, UK
University of Manchester, UK
University of Liverpool, UK

Posters & Accepted Abstracts: J Laser Opt Photonics

Abstract :

One-dimensional semiconductor nanowire materials have attracted increasing attention in the last decade due to their unique functionalities and the promising potential as new building blocks for next generation devices. Of particular interest is the III-V compound semiconductors nanowire-based nanostructures. For instance, the core-shell nanowires, dots-in-nanowires, nanowires/organic hybrid blends. This talk will present our recent research progress on several novel semiconductor nanostructures grown by using catalyst-free molecular beam epitaxy and their device applications. Through optimising a novel droplet-assisted epitaxy, we successfully synthsized GaSb/GaAs dots-in-nanowires, InAsSb/InAs superlattice nanowires, type II InAsSb/AlGaSb, type I InAs/InAsGsAs/AlInAs core-shell nanowires, which have potential in quantum detection and single photo emissions. The growth mechanisms will be discussed in droplet-assisted epitatxy followed by structural details investigated by X-ray diffraction, scanning electron microscope and high-resolution transimission electron microscope. The optical properties were also exploited by photoluminescence spectroscopy. The demonstration of these high quality nanowires showing advanced optical properties paves the route to realize quantum devices based on nanowires. In addition, the integration of such nanostructures with silicon and graphene will be also discussed.

Biography :

Email: q.zhuang@lancaster.ac.uk