High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

Journal of Lasers, Optics & Photonics

ISSN: 2469-410X

Open Access

High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications

8th International Conference and Exhibition on Lasers, Optics & Photonics

November 15-17, 2017 | Las Vegas, USA

Ilkay Demir, Hongjian. Li, Yoann Robin, Ryan McClintock, Ismail Altuntas, Sezai Elagoz, Konstantinos Zekentes, and Manijeh Razeghi

Cumhuriyet University, Turkey
Northwestern University, USA
University of California, Santa Barbara, USA
Foundation for Research & Technology-Hellas (FORTH), Greece

Scientific Tracks Abstracts: J Laser Opt Photonics

Abstract :

The growth of thick, high quality and low-stress AlN films on Si and Al2O3 substrates is highly desired for a number of applications like the development of micro and nanoelectromechanical system (MEMS and NEMS) technologies and particularly for fabricating AlGaN based UV-LEDs. UV-LEDs are attractive as they are applied in many areas, such as air and water sterilization, efficient white lighting, high-density optical data storage and military applications such as biological agent detection and non-lineof-sight communication. However, the development of UV-LEDs on Si substrates is highly desired for a series of reasons like the availability of cheap, large-diameter silicon wafers, the much lower device processing costs, and the possibility of monolithical integration of the UV-LEDs with Si circuitry. In addition, efficient AlGaN based deep UV-LEDs require layers and substrates which are transparent in UV light. So, it is preferable to grow the AlGaN based deep UV-LEDs active layers on Si substrates as the Si can be removed by chemical treatment to allow back illumination and avoid the generation and reabsorption of UV light by backside emission. These advantages make silicon an attractive substrate for AlGaN based UV devices. Additionally high quality AlN template on Al2O3 substrate still is the key layer to grow high quality AlN and high Al content AlGaN materials for DUV applications since AlN substrate price and size are not suitable for mass production.

Biography :

Ilkay Demir has completed his PhD at the age of 32 years from Cumhuriyet University, Physics Department. He is the researcher of Nanophotonics Research and Application Center and Department of Nanotechnology Enginnering. He spent 1 year of his PhD at Center for Quantum Devices under supervision of Prof. Manijeh Razeghi. He has published 5 papers in reputed journals.

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