Design of advanced QW lasers based on BxInyGa1-x-yN/GaN operating in the UV spectral region

4^th International Conference on Photonics & Laser Technology

July 28-29, 2016 Berlin, Germany

Abdenacer Assali

Ecole Nationale Polytechnique d'Oran, Algeria
Centre de D�©veloppement des Technologies Avanc�©es, Algeria

Posters & Accepted Abstracts: J Laser Opt Photonics

Abstract :

Electronic structure and optical constants of the dilute Boron-Indium quaternary alloy BxInyGa1�x�yN lattice matched to GaN have been investigated using the density functional theory calculations within Full-Potential Linearized Augmented Plane Wave method with x and y concentrations varying up to 0.187. The exchange-correlation potential is described by the by the local density approximation (LDA) to calculate the structural properties. The new developed Tran�Blaha-modified Becke� Johnson (TB-mBJ) exchange potential is used to compute the electronic structure in comparison with the GGA and LDA approximations. The optical constants were calculated by the TB-mBJ exchange potential. The calculated structural parameters are found to be in excellent agreement with the experimental data. The TB-mBJ exchange potential gives the best results for the band gap energy. We find that BxInyGa1�x�yN alloy is expected to be lattice matched to GaN substrate for (x= 0.125, y= 0.187). The incorporation of B and In into GaN substrate allows to reduce it band gap energy in the structure of BxInyGGa1�x�yN. In addition, the effect of B content on the optical properties of BxInyGa1�x�yN is discussed with y= 0.187, which are dependent on the B incorporated. Quaternary alloy BxInyGa1�x�yN lattice matched to GaN present a best properties including, high structural quality, small direct band gap and high refractive index. This makes BxInyGa1�x�yN/GaN a promising material might be uses as an active layer in single quantum well for design high-efficiency solar cells and advanced UV laser diodes.

Biography :

Email: assali_nacer@yahoo.fr